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Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4
| Title: | Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4 |
| Authors: | Fabian, Krahl Browse this author | | Yuzhang, Wu Browse this author | | Cho, Hai Jun Browse this author | | Karppinen, Maarit Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | InGaZnO4 | | interfaces | | multilayered film | | ZnO |
| Issue Date: | Oct-2020 |
| Publisher: | John Wiley & Sons |
| Journal Title: | Advanced Electronic Materials |
| Volume: | 6 |
| Issue: | 10 |
| Start Page: | 2000404 |
| Publisher DOI: | 10.1002/aelm.202000404 |
| Abstract: | The interface between two materials can be expected to show exotic optical, electrical, and thermal transport properties due to the difference in chemical bonding and chemical potential. However, in conventional material systems, the volume fraction of the interface is small compared to bulk, and interfacial properties are thus difficult to utilize. In this regard, multilayered films are essential to increase the volume fraction of interfaces and functionalize their properties. Here it is shown that carrier electrons can be generated spontaneously at the interface between polycrystalline ZnO and amorphous (a-) InGaZnO4. The electron transport properties are measured of multilayered films composed ofc-axis oriented polycrystalline ZnO and a-InGaZnO(4)with varying interface density (d(-1)). Although the carrier concentrations of both ZnO and a-InGaZnO(4)are less than 5 x 10(19)cm(-3), thenincreases withd(-1)and exceedes 10(20)cm(-3). The relatively large interface thermal resistance between ZnO and a-InGaZnO4(1.35 m(2)K GW(-1)) indicates the existence of a large difference in the chemical bonding and the chemical potential and thus conduction electrons would accumulate at the interface. |
| Rights: | This is the peer reviewed version of the following article: Krahl, F., Wu, Y., Cho, H. J., Karppinen, * M., Ohta* 2000404, H., Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4. Adv. Electron. Mater. 2020, 6, 2000404, which has been published in final form at https://doi.org/10.1002/aelm.202000404 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/82873 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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