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Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistors
| Title: | Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistors |
| Authors: | Liang, Dou-Dou Browse this author | | Chen, Binjie Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | effective channel thickness | | amorphous SnO2 | | transparent thin-film transistor | | electric-field thermopower modulation | | depletion layer | | bottom-gated |
| Issue Date: | 27-Oct-2020 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Electronic Materials |
| Volume: | 2 |
| Issue: | 10 |
| Start Page: | 3454 |
| End Page: | 3458 |
| Publisher DOI: | 10.1021/acsaelm.0c00711 |
| Abstract: | Nowadays, transparent amorphous oxide semiconductor (TAOS)-based transparent thin-film transistors (TTFTs) are utilized as the backplane of organic light-emitting diode (OLED) displays. Among many TAOSs examined to date, amorphous (a-)SnO2 is one of the most promising candidates owing to its environmental compatibility, e.g., indium-free. Although several SnO2-based TFTs have been demonstrated so far, the reported characteristics are ambiguous, e.g., extremely high electron mobility (>100 cm(2) V-1 s(-1)) and behaviors far different from those of currently used a-InGaZnO4 -based TFTs. Here, we show high-performance bottom-gated a-SnO2-based TTFTs. First, we systematically investigated the electron transport properties and the band gap of SnO2 films with various thicknesses. Then, we optimized the SnO2 thickness by analyzing the operation mechanism of the TTFTs using an electric-field thermopower modulation technique. We found that the optimal SnO2 thickness is 4.2 nm for high-performance TTFTs (highest on-to-off current ratio (similar to 10(5)) and high mobility (similar to 20 cm(2) V-1 s(-1))). The present results would be essential to develop a-SnO2-based TTFTs in commercial applications. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsaelm.0c00711 . |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83072 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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