|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Ba1/3CoO2 : A Thermoelectric Oxide Showing a Reliable ZT of similar to 0.55 at 600 degrees C in Air
| Title: | Ba1/3CoO2 : A Thermoelectric Oxide Showing a Reliable ZT of similar to 0.55 at 600 degrees C in Air |
| Authors: | Zhang, Xi Browse this author →KAKEN DB | | Zhang, Yuqiao Browse this author | | Wu, Liao Browse this author | | Tsuruta, Akihiro Browse this author →KAKEN DB | | Mikami, Masashi Browse this author →KAKEN DB | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | Ba1/3CoO2 | | layered oxide | | cobaltate | | thermoelectric materials | | figure of merit thermal stability |
| Issue Date: | 27-Jul-2022 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS applied materials & interfaces |
| Volume: | 14 |
| Issue: | 29 |
| Start Page: | 33355 |
| End Page: | 33360 |
| Publisher DOI: | 10.1021/acsami.2c08555 |
| Abstract: | Thermoelectric energy conversion technology has attracted attention as an energy harvesting technology that converts waste heat into electricity by means of the Seebeck effect. Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stability as well as their harmless nature compared to chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, the reliability is low due to a lack of careful observation of their stability at elevated temperatures. Here, we show a reliable high-ZT thermoelectric oxide, Ba1/3CoO2. We fabricated Ba1/3CoO2 epitaxial films by the reactive solid-phase epitaxy method (Na3/4CoO2) followed by ion exchange (Na+ -> Ba2+) treatment and performed thermal annealing of the film at high temperatures and structural and electrical measurements. The crystal structure and electrical resistivity of the Ba1/3CoO2 epitaxial films were found to be maintained up to 600 degrees C. The power factor gradually increased to similar to 1.2 mW m(-1) K-2 and the thermal conductivity gradually decreased to similar to 1.9 W m(-1) K-1 with increasing temperature up to 600 degrees C. Consequently, the ZT reached similar to 0.55 at 600 degrees C in air. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/86588 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
|
