|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Solid-State Electrochemical Thermal Transistors
| Title: | Solid-State Electrochemical Thermal Transistors |
| Authors: | Yang, Qian Browse this author | | Cho, Hai Jun Browse this author | | Bian, Zhiping Browse this author | | Yoshimura, Mitsuki Browse this author | | Lee, Joonhyuk Browse this author | | Jeen, Hyoungjeen Browse this author | | Lin, Jinghuang Browse this author | | Wei, Jiake Browse this author | | Feng, Bin Browse this author | | Ikuhara, Yuichi Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | electrochemistry | | redox treatment | | solid state | | thermal conductivity | | thermal transistors | | transition metal oxides |
| Issue Date: | 21-Feb-2023 |
| Publisher: | Wiley-Blackwell |
| Journal Title: | Advanced Functional Materials |
| Volume: | 33 |
| Issue: | 19 |
| Start Page: | 2214939 |
| Publisher DOI: | 10.1002/adfm.202214939 |
| Abstract: | Thermal transistors that electrically control heat flow have attracted growing attention as thermal management devices and phonon logic circuits. Although several thermal transistors are demonstrated, the use of liquid electrolytes may limit the application from the viewpoint of reliability or liquid leakage. Herein, a solid-state thermal transistor that can electrochemically control the heat flow with an on-to-off ratio of the thermal conductivity (kappa) of approximate to 4 without using any liquid is demonstrated. The thermal transistor is a multilayer film composed of an upper electrode, strontium cobaltite (SrCoOx), solid electrolyte, and bottom electrode. An electrochemical redox treatment at 280 degrees C in air repeatedly modulates the crystal structure and kappa of the SrCoOx layer. The fully oxidized perovskite-structured SrCoO3 layer shows a high kappa approximate to 3 .8 W m(-1) K-1, whereas the fully reduced defect perovskite-structured SrCoO2 layer shows a low kappa approximate to 0.95 W m(-1) K-1. The present solid-state electrochemical thermal transistor may become next-generation devices toward future thermal management technology. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/89536 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
|
