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Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

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Title: Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors
Authors: Yang, Hui Browse this author
Zhang, Yuqiao Browse this author
Matsuo, Yasutaka Browse this author
Magari, Yusaku Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Keywords: InSnZnOx
transparent amorphous oxide semiconductor
thermopower modulation
effective mass
carrier relaxation time
Issue Date: 25-Oct-2022
Publisher: American Chemical Society
Journal Title: ACS Applied Electronic Materials
Volume: 4
Issue: 10
Start Page: 5081
End Page: 5086
Publisher DOI: 10.1021/acsaelm.2c01210
Abstract: Transparent amorphous oxide semiconductor InSnZnOx (ITZO)-based thin-film transistors (TFTs) exhibit a high field-effect mobility (mu FE). Although ITZO-TFTs have attracted increasing attention as a next-generation backplane of flat panel displays, the origin of the high mu FE remains unclear due to the lack of systematic quantitative analyses using thermopower (S) as the measure. Here, we show that the high mu FE originates from an extremely light carrier effective mass (m*) and a long carrier relaxation time (z). The S measurements of several ITZO films with different carrier concentrations clarified that m* of ITZO films is similar to 0.11 m0, which is similar to 70% of that of a commercial oxide semiconductor, amorphous InGaZnO4 (similar to 0.16 m0). We then fabricated bottom-gate-top-contact ITZO-TFTs displaying excellent transistor characteristics (mu FE similar to 58 cm2 V-1 s-1) using amorphous AlOx as the gate insulator and demonstrated that the effective thickness increases with the gate voltage. This suggests that the bulk predominantly contributes to the drain current, which results in z as long as similar to 3.6 fs, which is quadruple that of amorphous InGaZnO4-TFTs (similar to 0.9 fs). The present results are useful to further improve the mobility of ITZO-TFTs.
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Type: article (author version)
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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