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Synthesis and transparent conductivity of crack-free La:BaSnO3 epitaxial flexible sheets
| Title: | Synthesis and transparent conductivity of crack-free La:BaSnO3 epitaxial flexible sheets |
| Authors: | Gong, Lizhikun Browse this author | | Yu, Rui Browse this author | | Ohta, Hiromichi Browse this author | | Katayama, Tsukasa Browse this author →KAKEN DB |
| Issue Date: | 17-Apr-2023 |
| Publisher: | Royal Society of Chemistry |
| Journal Title: | Dalton transactions |
| Publisher DOI: | 10.1039/d3dt01097j |
| Abstract: | La-doped BaSnO3 (LBSO), which exhibits both high electron mobility and visible-light transparency, is a promising transparent electrode/transistor material that does not require expensive elements such as indium. However, because a high crystal orientation is necessary for high mobility, the development of a synthetic technique is crucial for next-generation optoelectronic applications. One promising method for achieving this is the lift-off and transfer method. Epitaxial films are first deposited on single-crystal substrates, peeled off from the substrates, and subsequently transferred onto other substrates. However, such transferred sheets typically contain a high density of cracks. Therefore, LBSO sheets with flexibility, high mobility, and transparency have not yet been reported. In this study, we successfully synthesized crack-free LBSO epitaxial sheets via a lift-off and transfer method using a water-soluble Sr3Al2O6 sacrificial layer and amorphous (a-)Al2O3 protection layer. The LBSO sheet simultaneously exhibited a high electron mobility of 80 cm(2) V-1 s(-1) and a wide optical bandgap of 3.5 eV owing to the epitaxial crystallinity of the sheet. Moreover, two types of LBSO sheets were prepared, flat and rolled sheets, by tuning the lift-off process. The flat sheet had a lateral size of 5 mm x 5 mm, whereas the rolled sheet had a tube shape with a height of 5 mm and a diameter of 1 mm. Such large crack-free area and flexibility were achieved in LBSO sheets owing to the use of the a-Al2O3 protection layer. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/91765 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 片山 司
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