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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
bulletin (article)有本, 智; 金澤, 裕; 原, 毅彦; 大野, 英男; 長谷川, 英機等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価Characterization of Interface Properties in an Amorphous Silicon Metal Insulator Semiconductor Structure by Isothermal Capacitance Transient Spectroscopy北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University31-Jul-1985
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