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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.127 >
等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価
| Title: | 等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価 |
| Other Titles: | Characterization of Interface Properties in an Amorphous Silicon Metal Insulator Semiconductor Structure by Isothermal Capacitance Transient Spectroscopy |
| Authors: | 有本, 智1 Browse this author | | 金澤, 裕2 Browse this author | | 原, 毅彦3 Browse this author | | 大野, 英男4 Browse this author | | 長谷川, 英機5 Browse this author |
| Authors(alt): | Arimoto, Satoshi1 | | Kanazawa, Yutaka2 | | Hara, Takahiko3 | | Ohno, Hideo4 | | Hasegawa, Hideki5 |
| Issue Date: | 31-Jul-1985 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 127 |
| Start Page: | 27 |
| End Page: | 37 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/41944 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.127
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