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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.127 >

等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41944

Title: 等温過渡容量法 (ICTS) によるアモルファスSi MIS構造の評価
Other Titles: Characterization of Interface Properties in an Amorphous Silicon Metal Insulator Semiconductor Structure by Isothermal Capacitance Transient Spectroscopy
Authors: 有本, 智1 Browse this author
金澤, 裕2 Browse this author
原, 毅彦3 Browse this author
大野, 英男4 Browse this author
長谷川, 英機5 Browse this author
Authors(alt): Arimoto, Satoshi1
Kanazawa, Yutaka2
Hara, Takahiko3
Ohno, Hideo4
Hasegawa, Hideki5
Issue Date: 31-Jul-1985
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 127
Start Page: 27
End Page: 37
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41944
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.127

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