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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
bulletin (article)大植, 英司; 赤沢, 正道; 児玉, 聡; 長谷川, 英機シリコン超薄膜を用いたInGaAsの表面不活性化とその応用A New Surface Passivation Method of InGaAs Using a Si Ultrathin Layer and Its Application北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University20-Jul-1991
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