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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.156 >
シリコン超薄膜を用いたInGaAsの表面不活性化とその応用
| Title: | シリコン超薄膜を用いたInGaAsの表面不活性化とその応用 |
| Other Titles: | A New Surface Passivation Method of InGaAs Using a Si Ultrathin Layer and Its Application |
| Authors: | 大植, 英司1 Browse this author | | 赤沢, 正道2 Browse this author | | 児玉, 聡3 Browse this author | | 長谷川, 英機4 Browse this author |
| Authors(alt): | Ohue, Eiji1 | | Akazawa, Masamichi2 | | Kodama, Satoshi3 | | Hasegawa, Hideki4 |
| Issue Date: | 20-Jul-1991 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 156 |
| Start Page: | 51 |
| End Page: | 58 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/42285 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.156
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