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Yong, Gui Xie.
;
Kasai, S.
;
Takahashi, H.
;
Chao, Jiang.
;
Hasegawa, H.
A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
-
IEEE Electron Device Letters
-
Jul-2001
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