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A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5533

Title: A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance
Authors: Yong, Gui Xie. Browse this author
Kasai, S.2 Browse this author →KAKEN DB
Takahashi, H. Browse this author
Chao, Jiang. Browse this author
Hasegawa, H. Browse this author
Authors(alt): 葛西, 誠也2
Issue Date: Jul-2001
Publisher: IEEE
Journal Title: IEEE Electron Device Letters
Volume: 22
Issue: 7
Start Page: 312
End Page: 314
Publisher DOI: 10.1109/55.930675
Abstract: A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT (IG-PHEMT) utilizing a silicon interface control layer (Si ICL) was successfully fabricated and its DC and RF performances were characterized. The device showed high transconductance of 177 mS/mm even for a gate length of 1.6 μm. As compared with the conventional Schottky gate PHEMTs, the gate leakage current was reduced by 4 orders of magnitudes and the gate breakdown voltage was increased up to 39 V. Well-behaved RF characteristics with the current gain cutoff frequency, fT, of 9 GHz and the maximum oscillation frequency, fmax, of 38 GHz were obtained for the 1.6 μm-gate-length device
Rights: IEEE, Electron Device Letters, 22, 7, 2001, p312-314 ©2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”
Type: article
URI: http://hdl.handle.net/2115/5533
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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