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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent SubmissionsIsobe, Kazuki... [et al.] (2020) Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers. Japanese Journal of Applied Physics (JJAP), 59(4): 046506 The effect of chemical surface treatment on the uncontrolled surface oxide at a GaN surface and on F....
Akazawa, Masamichi... [et al.] (2020) Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing. Physica status solidi B-basic solid state physics, 257(2): 1900367 The effect of increasing the dosage on the electrical properties of Mg-ion-implanted GaN before acti....
Akazawa, Masamichi... [et al.] (2019) Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation. Japanese Journal of Applied Physics (JJAP), 58(10): 106504 Control of the plasma-CVD SiO2/InAlN interface by N2O plasma oxidation of the InAlN surface was stud....
Miwa, Kazuki... [et al.] (2020) Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures. Applied Physics Express (APEX), 13(2): 026508 Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostr....
Akazawa, Masamichi... [et al.] (2019) Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer. Japanese Journal of Applied Physics (JJAP), 58: SIIB06 To control a plasma-CVD SiO2/InAlN interface, the insertion of an ultrathin Al2O3 interlayer deposit....
Ochi, Ryota... [et al.] (2020) Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor. AIP Advances, 10(6): 065215 Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) a....
Toguchi, Masachika... [et al.] (2019) Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions. Applied Physics Express, 12(6): 066504 Electrodeless photo-assisted electrochemical etching was successfully demonstrated using a H-3 PO4-b....
Akazawa, Masamichi... [et al.] (2019) Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN. Japanese Journal of Applied Physics (JJAP), 58: SCCB10 The impact of low-temperature annealing on Mg-ion-implanted GaN with a low dosage (1.5 x 10(11) cm(-....
Horikiri, Fumimasa... [et al.] (2019) Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices. IEEE transactions on semiconductor manufacturing, 32(4): 489-495 Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilay....
Sato, Taketomo... [et al.] (2019) Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions. IEEE transactions on semiconductor manufacturing, 32(4): 483-488 This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricat....
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