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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent SubmissionsHatakeyama, Yuki... [et al.] (2022) Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer. AIP Advances, 12: 125224 An interface state density (D-it) distribution near the conduction band edge (E-C) at the Al2O3/Mg-i....
Akazawa, Masamichi... [et al.] (2022) Detection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance-voltage method. Journal of Applied Physics, 132(19): 195302 Defect levels in the vicinity of the Al2O3/p-type GaN interface were characterized using a sub-bandg....
Kanazawa, Yuri... [et al.] (2023) Pixel Variation Characteristics of a Global Shutter THz Imager and its Calibration Technique. IEICE transactions on fundamentals of electronics communications and computer sciences, E106A(5): 832-839 We have developed a Si-CMOS terahertz image sensor to address the paucity of low-cost terahertz dete....
Ou, Yafei... [et al.] (2023) A Sub-Pixel Accurate Quantification of Joint Space Narrowing Progression in Rheumatoid Arthritis. IEEE Journal of Biomedical and Health Informatics, 27(1): 53-64 Rheumatoid arthritis (RA) is a chronic autoimmune disease that primarily affects peripheral synovial....
Minehisa, Keisuke... [et al.] (2023) Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy. Nanoscale advances, 5(6): 1651-1663 GaAs/AlGaAs core-shell nanowires, typically having 250 nm diameter and 6 mu m length, were grown on ....
Akazawa, Masamichi... [et al.] (2022) Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN. Journal of electronic materials, 51(4): 1731-1739 The encapsulant-dependent effects of long-term low-temperature annealing on defects in Mg-ion-implan....
Kasai, Seiya (2022) Thermally driven single-electron stochastic resonance. Nanotechnology, 33(50): 505203 Stochastic resonance (SR) in a single-electron system is expected to allow information to be correct....
Ou, Yafei... [et al.] (2022) Real-Time Tone Mapping : A Survey and Cross-Implementation Hardware Benchmark. IEEE transactions on circuits and systems for video technology, 32(5): 2666-2686 The rising demand for high quality display has ensued active research in high dynamic range (HDR) im....
Akazawa, Masamichi... [et al.] (2021) X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN. Japanese Journal of Applied Physics (JJAP), 60(3): 036503 The effects of ultra-high-pressure annealing (UHPA) on the surface of Mg-ion-implanted GaN were inve....
Akazawa, Masamichi... [et al.] (2021) Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam. Japanese Journal of Applied Physics (JJAP), 60(1): 016502 Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10....
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