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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent SubmissionsToguchi, Masachika... [et al.] (2019) Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions. Applied Physics Express, 12(6): 066504 Electrodeless photo-assisted electrochemical etching was successfully demonstrated using a H-3 PO4-b....
Akazawa, Masamichi... [et al.] (2019) Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN. Japanese Journal of Applied Physics (JJAP), 58: SCCB10 The impact of low-temperature annealing on Mg-ion-implanted GaN with a low dosage (1.5 x 10(11) cm(-....
Horikiri, Fumimasa... [et al.] (2019) Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices. IEEE transactions on semiconductor manufacturing, 32(4): 489-495 Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilay....
Sato, Taketomo... [et al.] (2019) Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions. IEEE transactions on semiconductor manufacturing, 32(4): 483-488 This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricat....
Matsumoto, Satoru... [et al.] (2018) Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN. Japanese Journal of Applied Physics (JJAP), 57(12): 121001 We investigated the ability of a photo-assisted electrochemical (PEC) etching process to remove the ....
Horiguchi, Ryoma... [et al.] (2018) Magnetic domain structure and domain wall analysis of ferromagnetic MnAs nanodisks selectively-grown on Si (111) substrates for spintronic applications. Journal of Applied Physics, 124(15): 153905 We report on the experimental and analytic results on magnetic domain and domain wall structures of ....
Uemura, Keisuke... [et al.] (2019) Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics (JJAP), 58: SCCD20 Recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMT....
Toguchi, Masachika... [et al.] (2019) Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Journal of the electrochemical society, 166(12): H510-H512 Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated ....
Hiramatsu, Shota... [et al.] (2019) 2.4GHz wake-up receiver with suppressed substrate noise coupling. Analog integrated circuits and signal processing, 100(1): 23-29 The switching noise generated in digital circuits propagates through conductive silicon substrate to....
Akazawa, Masamichi... [et al.] (2018) Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces. Physica status solidi B-basic solid state physics, 255(5): 1700382 Fermi level depinning at a metal/semiconductor interface by using an ultrathin insulating interlayer....
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