|
|
|
||
| Hokkaido University | Library | HUSCAP | Advanced Search | ||
|
Hokkaido University Collection of Scholarly and Academic Papers >
Collections in this community
|
Recent SubmissionsMatsumoto, Satoru... [et al.] (2018) Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN. Japanese Journal of Applied Physics (JJAP), 57(12): 121001 We investigated the ability of a photo-assisted electrochemical (PEC) etching process to remove the ....
Horiguchi, Ryoma... [et al.] (2018) Magnetic domain structure and domain wall analysis of ferromagnetic MnAs nanodisks selectively-grown on Si (111) substrates for spintronic applications. Journal of Applied Physics, 124(15): 153905 We report on the experimental and analytic results on magnetic domain and domain wall structures of ....
Uemura, Keisuke... [et al.] (2019) Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics (JJAP), 58: SCCD20 Recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMT....
Toguchi, Masachika... [et al.] (2019) Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Journal of the electrochemical society, 166(12): H510-H512 Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated ....
Hiramatsu, Shota... [et al.] (2019) 2.4GHz wake-up receiver with suppressed substrate noise coupling. Analog integrated circuits and signal processing, 100(1): 23-29 The switching noise generated in digital circuits propagates through conductive silicon substrate to....
Akazawa, Masamichi... [et al.] (2018) Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces. Physica status solidi B-basic solid state physics, 255(5): 1700382 Fermi level depinning at a metal/semiconductor interface by using an ultrathin insulating interlayer....
Kasai, Seiya... [et al.] (2018) Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition. Applied Physics Express (APEX), 11(3): 037301 A bistable system efficiently detects a weak signal by adding noise, which is referred to as stochas....
Isobe, Kazuki... [et al.] (2018) Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode. AIP Advances, 8(11): 115011 The impact of surface treatment on Schottky contacts on a GaN-on-GaN epitaxial layer was comprehensi....
Hashizume, Tamotsu... [et al.] (2018) Effects of postmetallization annealing on interface properties of Al2O3/GaN structures. Applied Physics Express (APEX), 11(12): 124102 In this study, we investigated the effects of postmetallization annealing (PMA) on the interface pro....
Akazawa, Masamichi... [et al.] (2017) Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers. Physica status solidi B-basic solid state physics, 254(8): 1600691 SiO2/InAlN interfaces formed by plasma-enhanced chemical vapor deposition were investigated. X-ray p....
RSS Feeds
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
