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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent SubmissionsUemura, Keisuke... [et al.] (2019) Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics (JJAP), 58: SCCD20 Recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMT....
Toguchi, Masachika... [et al.] (2019) Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect. Journal of the electrochemical society, 166(12): H510-H512 Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated ....
Hiramatsu, Shota... [et al.] (2019) 2.4GHz wake-up receiver with suppressed substrate noise coupling. Analog integrated circuits and signal processing, 100(1): 23-29 The switching noise generated in digital circuits propagates through conductive silicon substrate to....
Akazawa, Masamichi... [et al.] (2018) Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces. Physica status solidi B-basic solid state physics, 255(5): 1700382 Fermi level depinning at a metal/semiconductor interface by using an ultrathin insulating interlayer....
Kasai, Seiya... [et al.] (2018) Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition. Applied Physics Express (APEX), 11(3): 037301 A bistable system efficiently detects a weak signal by adding noise, which is referred to as stochas....
Isobe, Kazuki... [et al.] (2018) Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode. AIP Advances, 8(11): 115011 The impact of surface treatment on Schottky contacts on a GaN-on-GaN epitaxial layer was comprehensi....
Hashizume, Tamotsu... [et al.] (2018) Effects of postmetallization annealing on interface properties of Al2O3/GaN structures. Applied Physics Express (APEX), 11(12): 124102 In this study, we investigated the effects of postmetallization annealing (PMA) on the interface pro....
Akazawa, Masamichi... [et al.] (2017) Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers. Physica status solidi B-basic solid state physics, 254(8): 1600691 SiO2/InAlN interfaces formed by plasma-enhanced chemical vapor deposition were investigated. X-ray p....
Matys, M.... [et al.] (2017) Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied physics letters, 110(24): 243505 The key feature for the precise tuning of V-th in GaN-based metal-insulator-semiconductor (MIS) high....
Okamoto, Shoma... [et al.] (2017) Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling. Japanese Journal of Applied Physics (JJAP), 56(6): 06GK02 We investigate a detection technique of charge dynamics of a molecular particle using a GaAs-based n....
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