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Hokkaido University Collection of Scholarly and Academic Papers >
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最近登録された資料Hashizume, Tamotsu... [et al.] (2018) Effects of postmetallization annealing on interface properties of Al2O3/GaN structures. Applied Physics Express (APEX), 11(12): 124102 In this study, we investigated the effects of postmetallization annealing (PMA) on the interface pro....
Akazawa, Masamichi... [et al.] (2017) Reduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers. Physica status solidi B-basic solid state physics, 254(8): 1600691 SiO2/InAlN interfaces formed by plasma-enhanced chemical vapor deposition were investigated. X-ray p....
Matys, M.... [et al.] (2017) Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied physics letters, 110(24): 243505 The key feature for the precise tuning of V-th in GaN-based metal-insulator-semiconductor (MIS) high....
Okamoto, Shoma... [et al.] (2017) Detection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling. Japanese Journal of Applied Physics (JJAP), 56(6): 06GK02 We investigate a detection technique of charge dynamics of a molecular particle using a GaAs-based n....
Kumazaki, Yusuke... [et al.] (2017) Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process. Journal of Applied Physics, 121(18): 184501 The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gat....
Kuroda, Ryota... [et al.] (2017) Implementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network. International journal of parallel, emergent and distributed systems, 32(3): 287-294 Toward reconfigurable and noise-coexistence information processing system utilizing nanostructures, ....
Akazawa, Masamichi... [et al.] (2018) Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing. AIP Advances, 8(2): 025310 We report experimental results for the detection of deep-level defects in GaN after Mg ion implantat....
Hashizume, Tamotsu... [et al.] (2018) State of the art on gate insulation and surface passivation for GaN-based power HEMTs. Materials science in semiconductor processing, 78: 85-95 In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor ....
Matys, M.... [et al.] (2017) Mechanism of yellow luminescence in GaN at room temperature. Journal of Applied Physics, 121(6): 65104 We investigated the excitation intensity (U) dependent photoluminescence (PL), at room temperature (....
Matys, M.... [et al.] (2016) On the origin of interface states at oxide/III-nitride heterojunction interfaces. Journal of Applied Physics, 120(22): 225305 The energy spectrum of interface state density, D-it(E), was determined at oxide/III-N heterojunctio....
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