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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent SubmissionsAkazawa, Masamichi... [et al.] (2021) X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN. Japanese Journal of Applied Physics (JJAP), 60(3): 036503 The effects of ultra-high-pressure annealing (UHPA) on the surface of Mg-ion-implanted GaN were inve....
Akazawa, Masamichi... [et al.] (2021) Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam. Japanese Journal of Applied Physics (JJAP), 60(1): 016502 Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10....
Saito, Kenta... [et al.] (2020) Effect of feedback delays on solution quality in amoeba-inspired computing system that solves traveling salesman problem. Applied Physics Express (APEX), 13(11): 114501 We investigate how feedback delays affect the quality of solutions from an amoeba-inspired analog el....
Ambalathankandy, Prasoon... [et al.] (2021) Warm-cool color-based high-speed decolorization: an empirical approach for tone mapping applications. Journal of electronic imaging, 30(4): 043026 Grayscale images are fundamental to many image processing applications, such as data compression, fe....
Sasaki, Kentaro... [et al.] (2020) Current timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip. Japanese Journal of Applied Physics (JJAP), 59(10): 105005 We demonstrate a current timer switch function in a GaAs-based nanowire electrostatically coupled wi....
Akazawa, Masamichi... [et al.] (2021) Formation of thermally grown SiO2/GaN interface. AIP Advances, 11(8): 085020 An attempt was made to form a thermally grown SiO2/GaN interface. A Si layer deposited on the c-plan....
Akazawa, Masamichi... [et al.] (2020) Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing. Japanese Journal of Applied Physics (JJAP), 59(9): 096502 The characteristics of a MOS diode with Mg-ion-implanted GaN before activation annealing were invest....
Toguchi, Masachika... [et al.] (2021) Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Journal of Applied Physics, 130(2): 24501 Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN hig....
Asubar, Joel T.... [et al.] (2021) Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation. Journal of Applied Physics, 129(12): 121102 Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap semicond....
Isobe, Kazuki... [et al.] (2020) Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers. Japanese Journal of Applied Physics (JJAP), 59(4): 046506 The effect of chemical surface treatment on the uncontrolled surface oxide at a GaN surface and on F....
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