|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
| Title: | Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing |
| Authors: | Hatakeyama, Yuki Browse this author | | Narita, Tetsuo Browse this author | | Bockowski, Michal Browse this author | | Kachi, Tetsu Browse this author | | Akazawa, Masamichi Browse this author →KAKEN DB |
| Keywords: | MOS | | interface state | | point defect | | C-V method |
| Issue Date: | 25-Jul-2023 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 62 |
| Issue: | SN |
| Start Page: | 1002 |
| Publisher DOI: | 10.35848/1347-4065/ace3d1 |
| Abstract: | The gap states near the conduction band edge (E (C)) in the vicinity of the interface between Mg-ion-implanted GaN and Al2O3 deposited after post-implantation annealing were investigated in the range between E (C )- 0.15 eV and E (C )- 0.45 eV. For this purpose, capacitance-voltage measurements were performed on MOS diodes with the n-type conduction of Mg-implanted GaN maintained by suppressing the dose. Although the gap state density D (T) was reduced for the sample prepared with the dose of 1.5 x 10(12) cm(-2) by conventional rapid thermal annealing (RTA) at 1250 C for 1 min using an AlN protective cap layer, further improvement was achieved by capless ultra-high-pressure annealing (UHPA) at the same temperature for the same duration. Furthermore, the D (T) distributions for the samples with capless UHPA at 1400 C for 5 min are comparable to that for the sample with conventional RTA at 1250 C for 1 min using the cap layer. |
| Rights: | This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ace3d1. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/92847 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 赤澤 正道
|
