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雑誌発表論文等 (Peer-reviewed Journal Articles, etc) : [211]

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleAkazawa, Masamichi; Kitawaki, YuyaFormation of thermally grown SiO2/GaN interface-AIP Advances-13-Aug-2021
articleToguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)-Journal of Applied Physics-8-Jul-2021
article (author version)Ambalathankandy, Prasoon; Ou, Yafei; Ikebe, MasayukiWarm-cool color-based high-speed decolorization: an empirical approach for tone mapping applications-Journal of electronic imaging-Jul-2021
articleAsubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, TamotsuControlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation-Journal of Applied Physics-28-Mar-2021
article (author version)Sasaki, Kentaro; Saito, Shunsuke; Kasai, SeiyaCurrent timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip-Japanese Journal of Applied Physics (JJAP)-1-Oct-2020
article (author version)Akazawa, Masamichi; Kamoshida, RyoAnalysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing-Japanese Journal of Applied Physics (JJAP)-1-Sep-2020
articleOchi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, TamotsuGate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor-AIP Advances-10-Jun-2020
article (author version)Isobe, Kazuki; Akazawa, MasamichiEffects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, TetsuEffects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing-Physica status solidi B-basic solid state physics-6-Feb-2020
articleMiwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures-Applied Physics Express (APEX)-1-Feb-2020
article (author version)Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, TaketomoPhotoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices-IEEE transactions on semiconductor manufacturing-Nov-2019
article (author version)Sato, Taketomo; Toguchi, Masachika; Komatsu, Yuto; Uemura, KeisukeLow-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions-IEEE transactions on semiconductor manufacturing-Nov-2019
article (author version)Akazawa, Masamichi; Kitajima, Shouhei; Kitawaki, YuyaControl of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation-Japanese Journal of Applied Physics (JJAP)-1-Oct-2019
article (author version)Akazawa, Masamichi; Kitajima, ShouheiControl of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer-Japanese Journal of Applied Physics (JJAP)-1-Aug-2019
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
articleHiramatsu, Shota; Ikebe, Masayuki; Sano, Eiichi2.4GHz wake-up receiver with suppressed substrate noise coupling-Analog integrated circuits and signal processing-Jul-2019
article (author version)Akazawa, Masamichi; Uetake, KeiImpact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
articleUemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, TaketomoEffect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
article (author version)Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Yoshida, Takehiro; Sato, TaketomoElectrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions-Applied Physics Express-Jun-2019
article (author version)Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, TaketomoEffects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN-Japanese Journal of Applied Physics (JJAP)-Dec-2018
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