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Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
: [220]
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Showing results 1 to 20 of 220
| Type | Author(s) | Title | Other Titles | Citation | Citation(alt) | Issue Date | | article | Kanazawa, Yuri; Ambalathankandy, Prasoon; Ikebe, Masayuki | Pixel Variation Characteristics of a Global Shutter THz Imager and its Calibration Technique | - | IEICE transactions on fundamentals of electronics communications and computer sciences | - | May-2023 |
| article | Minehisa, Keisuke; Murakami, Ryo; Hashimoto, Hidetoshi; Nakama, Kaito; Sakaguchi, Kenta; Tsutsumi, Rikuo; Tanigawa, Takeru; Yukimune, Mitsuki; Nagashima, Kazuki; Yanagida, Takeshi; Sato, Shino; Hiura, Satoshi; Murayama, Akihiro; Ishikawa, Fumitaro | Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy | - | Nanoscale advances | - | 21-Mar-2023 |
| article (author version) | Ou, Yafei; Ambalathankandy, Prasoon; Furuya, Ryunosuke; Kawada, Seiya; Zeng, Tianyu; An, Yujie; Kamishima, Tamotsu; Tamura, Kenichi; Ikebe, Masayuki | A Sub-Pixel Accurate Quantification of Joint Space Narrowing Progression in Rheumatoid Arthritis | - | IEEE Journal of Biomedical and Health Informatics | - | Jan-2023 |
| article | Kasai, Seiya | Thermally driven single-electron stochastic resonance | - | Nanotechnology | - | 3-Oct-2022 |
| article | Ou, Yafei; Ambalathankandy, Prasoon; Takamaeda, Shinya; Motomura, Masato; Asai, Tetsuya; Ikebe, Masayuki | Real-Time Tone Mapping : A Survey and Cross-Implementation Hardware Benchmark | - | IEEE transactions on circuits and systems for video technology | - | May-2022 |
| article (author version) | Akazawa, Masamichi; Murai, Shunta; Kachi, Tetsu | Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN | - | Journal of electronic materials | - | 3-Feb-2022 |
| article | Akazawa, Masamichi; Kitawaki, Yuya | Formation of thermally grown SiO2/GaN interface | - | AIP Advances | - | 13-Aug-2021 |
| article | Toguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) | - | Journal of Applied Physics | - | 8-Jul-2021 |
| article (author version) | Ambalathankandy, Prasoon; Ou, Yafei; Ikebe, Masayuki | Warm-cool color-based high-speed decolorization: an empirical approach for tone mapping applications | - | Journal of electronic imaging | - | Jul-2021 |
| article | Asubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, Tamotsu | Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation | - | Journal of Applied Physics | - | 28-Mar-2021 |
| article (author version) | Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, Tetsu | X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Mar-2021 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, Akira | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Jan-2021 |
| article (author version) | Saito, Kenta; Kasai, Seiya | Effect of feedback delays on solution quality in amoeba-inspired computing system that solves traveling salesman problem | - | Applied Physics Express (APEX) | - | 1-Nov-2020 |
| article (author version) | Sasaki, Kentaro; Saito, Shunsuke; Kasai, Seiya | Current timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Oct-2020 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo | Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Sep-2020 |
| article | Ochi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, Tamotsu | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor | - | AIP Advances | - | 10-Jun-2020 |
| article (author version) | Isobe, Kazuki; Akazawa, Masamichi | Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers | - | Japanese Journal of Applied Physics (JJAP) | - | 1-Apr-2020 |
| article (author version) | Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, Tetsu | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing | - | Physica status solidi B-basic solid state physics | - | 6-Feb-2020 |
| article | Miwa, Kazuki; Komatsu, Yuto; Toguchi, Masachika; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, Taketomo | Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures | - | Applied Physics Express (APEX) | - | 1-Feb-2020 |
| article (author version) | Horikiri, Fumimasa; Fukuhara, Noboru; Ohta, Hiroshi; Asai, Naomi; Narita, Yoshinobu; Yoshida, Takehiro; Mishima, Tomoyoshi; Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices | - | IEEE transactions on semiconductor manufacturing | - | Nov-2019 |
Showing results 1 to 20 of 220
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