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雑誌発表論文等 (Peer-reviewed Journal Articles, etc) : [195]

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleToguchi, Masachika; Miwa, Kazuki; Sato, TaketomoCommunication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect-Journal of the electrochemical society-15-Jul-2019
articleHiramatsu, Shota; Ikebe, Masayuki; Sano, Eiichi2.4GHz wake-up receiver with suppressed substrate noise coupling-Analog integrated circuits and signal processing-Jul-2019
articleUemura, Keisuke; Deki, Manato; Honda, Yoshio; Amano, Hiroshi; Sato, TaketomoEffect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-1-Jun-2019
articleHashizume, Tamotsu; Kaneki, Shota; Oyobiki, Tatsuya; Ando, Yuji; Sasaki, Shota; Nishiguchi, KenyaEffects of postmetallization annealing on interface properties of Al2O3/GaN structures-Applied Physics Express (APEX)-Dec-2018
article (author version)Matsumoto, Satoru; Toguchi, Masachika; Takeda, Kentaro; Narita, Tetsuo; Kachi, Tetsu; Sato, TaketomoEffects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN-Japanese Journal of Applied Physics (JJAP)-Dec-2018
articleIsobe, Kazuki; Akazawa, MasamichiImpact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode-AIP Advances-Nov-2018
articleHoriguchi, Ryoma; Hara, Shinjiro; Iida, MasayaMagnetic domain structure and domain wall analysis of ferromagnetic MnAs nanodisks selectively-grown on Si (111) substrates for spintronic applications-Journal of Applied Physics-21-Oct-2018
articleHashizume, Tamotsu; Nishiguchi, Kenya; Kaneki, Shota; Kuzmik, Jan; Yatabe, ZenjiState of the art on gate insulation and surface passivation for GaN-based power HEMTs-Materials science in semiconductor processing-May-2018
article (author version)Akazawa, Masamichi; Hasezaki, TaitoEffect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces-Physica status solidi B-basic solid state physics-May-2018
article (author version)Kasai, Seiya; Ichiki, Akihisa; Tadokoro, YukihiroDivergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition-Applied Physics Express (APEX)-Mar-2018
articleAkazawa, Masamichi; Yokota, Naoshige; Uetake, KeiDetection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing-AIP Advances-Feb-2018
articleNishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, TamotsuCurrent linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors-Japanese Journal of Applied Physics (JJAP)-Oct-2017
article (author version)Akazawa, Masamichi; Seino, AtsushiReduction of interface state density at SiO2/InAlN interface by inserting ultrathin Al2O3 and plasma oxide interlayers-Physica status solidi B-basic solid state physics-Aug-2017
articleMatys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition-Applied physics letters-15-Jun-2017
article (author version)Okamoto, Shoma; Sato, Masaki; Sasaki, Kentaro; Kasai, SeiyaDetection of charge dynamics of a tetraphenylporphyrin particle using GaAs-based nanowire enhanced by particle-metal tip capacitive coupling-Japanese Journal of Applied Physics (JJAP)-Jun-2017
articleKumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, TamotsuPrecise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process-Journal of Applied Physics-14-May-2017
articleKumazaki, Yusuke; Matsumoto, Satoru; Sato, TaketomoPrecise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications-Journal of The Electrochemical Society-12-May-2017
article (author version)Kuroda, Ryota; Kasai, SeiyaImplementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network-International journal of parallel, emergent and distributed systems-May-2017
articleMatys, M.; Adamowicz, B.Mechanism of yellow luminescence in GaN at room temperature-Journal of Applied Physics-14-Feb-2017
articleMatys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.On the origin of interface states at oxide/III-nitride heterojunction interfaces-Journal of Applied Physics-14-Dec-2016
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