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雑誌発表論文等 (Peer-reviewed Journal Articles, etc) : [222]

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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
articleKanazawa, Yuri; Ambalathankandy, Prasoon; Ikebe, MasayukiPixel Variation Characteristics of a Global Shutter THz Imager and its Calibration Technique-IEICE transactions on fundamentals of electronics communications and computer sciences-May-2023
articleMinehisa, Keisuke; Murakami, Ryo; Hashimoto, Hidetoshi; Nakama, Kaito; Sakaguchi, Kenta; Tsutsumi, Rikuo; Tanigawa, Takeru; Yukimune, Mitsuki; Nagashima, Kazuki; Yanagida, Takeshi; Sato, Shino; Hiura, Satoshi; Murayama, Akihiro; Ishikawa, FumitaroWafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy-Nanoscale advances-21-Mar-2023
article (author version)Ou, Yafei; Ambalathankandy, Prasoon; Furuya, Ryunosuke; Kawada, Seiya; Zeng, Tianyu; An, Yujie; Kamishima, Tamotsu; Tamura, Kenichi; Ikebe, MasayukiA Sub-Pixel Accurate Quantification of Joint Space Narrowing Progression in Rheumatoid Arthritis-IEEE Journal of Biomedical and Health Informatics-Jan-2023
article (author version)Hatakeyama, Yuki; Akazawa, MasamichiInterface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer-AIP Advances-21-Dec-2022
articleAkazawa, Masamichi; Tamamura, Yuya; Nukariya, Takahide; Kubo, Kouta; Sato, Taketomo; Narita, Tetsuo; Kachi, TetsuDetection of defect levels in vicinity of Al₂O₃/p-type GaN interface using sub-bandgap-light-assisted capacitance-voltage method-Journal of Applied Physics-16-Nov-2022
articleKasai, SeiyaThermally driven single-electron stochastic resonance-Nanotechnology-3-Oct-2022
articleOu, Yafei; Ambalathankandy, Prasoon; Takamaeda, Shinya; Motomura, Masato; Asai, Tetsuya; Ikebe, MasayukiReal-Time Tone Mapping : A Survey and Cross-Implementation Hardware Benchmark-IEEE transactions on circuits and systems for video technology-May-2022
article (author version)Akazawa, Masamichi; Murai, Shunta; Kachi, TetsuEncapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN-Journal of electronic materials-3-Feb-2022
articleAkazawa, Masamichi; Kitawaki, YuyaFormation of thermally grown SiO2/GaN interface-AIP Advances-13-Aug-2021
articleToguchi, Masachika; Miwa, Kazuki; Horikiri, Fumimasa; Fukuhara, Noboru; Narita, Yoshinobu; Ichikawa, Osamu; Isono, Ryota; Tanaka, Takeshi; Sato, TaketomoSelf-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)-Journal of Applied Physics-8-Jul-2021
article (author version)Ambalathankandy, Prasoon; Ou, Yafei; Ikebe, MasayukiWarm-cool color-based high-speed decolorization: an empirical approach for tone mapping applications-Journal of electronic imaging-Jul-2021
articleAsubar, Joel T.; Yatabe, Zenji; Gregusova, Dagmar; Hashizume, TamotsuControlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation-Journal of Applied Physics-28-Mar-2021
article (author version)Akazawa, Masamichi; Wu, Encheng; Sakurai, Hideki; Bockowski, Michal; Narita, Tetsuo; Kachi, TetsuX-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN-Japanese Journal of Applied Physics (JJAP)-1-Mar-2021
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, Tetsu; Uedono, AkiraLow-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam-Japanese Journal of Applied Physics (JJAP)-1-Jan-2021
article (author version)Saito, Kenta; Kasai, SeiyaEffect of feedback delays on solution quality in amoeba-inspired computing system that solves traveling salesman problem-Applied Physics Express (APEX)-1-Nov-2020
article (author version)Sasaki, Kentaro; Saito, Shunsuke; Kasai, SeiyaCurrent timer switch in a GaAs-based nanowire coupled with polyoxometalate nanoparticle and conductive AFM tip-Japanese Journal of Applied Physics (JJAP)-1-Oct-2020
article (author version)Akazawa, Masamichi; Kamoshida, RyoAnalysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing-Japanese Journal of Applied Physics (JJAP)-1-Sep-2020
articleOchi, Ryota; Maeda, Erika; Nabatame, Toshihide; Shiozaki, Koji; Sato, Taketomo; Hashizume, TamotsuGate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor-AIP Advances-10-Jun-2020
article (author version)Isobe, Kazuki; Akazawa, MasamichiEffects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers-Japanese Journal of Applied Physics (JJAP)-1-Apr-2020
article (author version)Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Narita, Tetsuo; Omori, Masato; Suda, Jun; Kachi, TetsuEffects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing-Physica status solidi B-basic solid state physics-6-Feb-2020
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