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Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing
Title: | Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing |
Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | Kamoshida, Ryo Browse this author |
Keywords: | Mg-ion implantation | defect level | GaN | MOS |
Issue Date: | 1-Sep-2020 |
Publisher: | IOP Publishing |
Journal Title: | Japanese Journal of Applied Physics (JJAP) |
Volume: | 59 |
Issue: | 9 |
Start Page: | 096502 |
Publisher DOI: | 10.35848/1347-4065/abac41 |
Abstract: | The characteristics of a MOS diode with Mg-ion-implanted GaN before activation annealing were investigated. Mg ion implantation onto n-GaN with slightly high Si doping concentration (5 x 10(17) cm(-3)) was performed with a moderate dosage (1.5 x 10(12) cm(-2)). The completed MOS diode showed n-type features. The capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the MOS diode indicated that shallow surface Fermi level pinning and deep depletion occurred simultaneously. By applying the conductance method to the measuredC-fcharacteristics, a discrete level at 0.2-0.3 eV below the conduction band edge was detected. On the basis of the simulation of the high-frequency-limitC-Vcurve, the detected discrete level distributed in the bulk of n-GaN rather than at the insulator/semiconductor interface, so that it caused surface Fermi level pinning at a relatively shallow energy level and deep depletion owing to its acceptorlike nature simultaneously. |
Rights: | © 2020 The Japan Society of Applied Physics |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/82587 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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