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Thermally driven single-electron stochastic resonance

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Title: Thermally driven single-electron stochastic resonance
Authors: Kasai, Seiya Browse this author →KAKEN DB
Keywords: single electron
stochastic resonance
thermal fluctuation
GaAs nanowire
theoretical model
Issue Date: 3-Oct-2022
Publisher: IOP Publishing
Journal Title: Nanotechnology
Volume: 33
Issue: 50
Start Page: 505203
Publisher DOI: 10.1088/1361-6528/ac9188
Abstract: Stochastic resonance (SR) in a single-electron system is expected to allow information to be correctly carried and processed by single electrons in the presence of thermal fluctuations. Here, we comprehensively study thermally driven single-electron SR. The response of the system to a weak voltage signal is formulated by considering the single-electron tunneling rate, instead of the Kramers' rate generally used in conventional SR models. The model indicates that the response of the system is maximized at finite temperature and that the peak position is determined by the charging energy. This model quantitatively reproduces the results of a single-electron device simulator. Single-electron SR is also demonstrated using a GaAs-based single-electron system that integrates a quantum dot and a high-sensitivity charge detector. The developed model will contribute to our understanding of single-electron SR and will facilitate accurate prediction, design, and control of single-electron systems.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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