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Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
| Title: | Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) |
| Authors: | Toguchi, Masachika Browse this author | | Miwa, Kazuki Browse this author | | Horikiri, Fumimasa Browse this author | | Fukuhara, Noboru Browse this author | | Narita, Yoshinobu Browse this author | | Ichikawa, Osamu Browse this author | | Isono, Ryota Browse this author | | Tanaka, Takeshi Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Issue Date: | 8-Jul-2021 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 130 |
| Issue: | 2 |
| Start Page: | 24501 |
| Publisher DOI: | 10.1063/5.0051045 |
| Abstract: | Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in V-th, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal-insulator-semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (sigma) of the V-th of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations. |
| Rights: | Copyright 2021 Authors. This article is distributed under a Creative Commons Attribution (CC BY) License. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/82407 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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