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Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing
| Title: | Effects of Dosage Increase on Electrical Properties of Metal-Oxide-Semiconductor Diodes with Mg-Ion-Implanted GaN Before Activation Annealing |
| Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | | Kamoshida, Ryo Browse this author | | Murai, Shunta Browse this author | | Narita, Tetsuo Browse this author | | Omori, Masato Browse this author | | Suda, Jun Browse this author | | Kachi, Tetsu Browse this author |
| Keywords: | deep level transient spectroscopy | | gallium nitride | | ion implantation | | metal-oxide-semiconductor diodes |
| Issue Date: | 6-Feb-2020 |
| Publisher: | Wiley-Blackwell |
| Journal Title: | Physica status solidi B-basic solid state physics |
| Volume: | 257 |
| Issue: | 2 |
| Start Page: | 1900367 |
| Publisher DOI: | 10.1002/pssb.201900367 |
| Abstract: | The effect of increasing the dosage on the electrical properties of Mg-ion-implanted GaN before activation annealing is investigated to obtain knowledge on the defect levels generated by ion implantation. To probe the near-surface region, GaN metal-oxide-semiconductor (MOS) structures with Al2O3 are used. Two kinds of MOS diodes with Mg-ion dosages of 1.5 x 10(11) and 1.5 x 10(12) cm(-2) implanted at 50 keV are prepared. Although anomalous capacitance-voltage (C-V) characteristics are observed for the low-dosage sample, they are improved by annealing at 600 degrees C for 3 h. However, for the high-dosage sample, more severe and persistent frequency dispersion is observed in the C-V characteristics, which is not improved by the same annealing. On the basis of the detailed analysis of capacitance-frequency (C-f) characteristics, it is concluded that the discrete interface trap at 0.2-0.3 eV below the conduction band is responsible for the frequency dispersion observed for the high-dosage sample. Combined with the results of deep-level transient spectroscopy, it is highly likely that the bulk deep levels affect the C-V and C-f characteristics. The possibility that the dominant deep levels are changed by the increase in Mg-ion dosage is discussed. |
| Rights: | This is the peer reviewed version of the following article: Akazawa, M. , Kamoshida, R. , Murai, S. , Narita, T. , Omori, M. , Suda, J. and Kachi, T. (2019), Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing. Phys. Status Solidi B. , which has been published in final form at https://doi.org/10.1002/pssb.201900367. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/80376 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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