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Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers
| Title: | Effects of surface treatment on Fermi level pinning at metal/GaN interfaces formed on homoepitaxial GaN layers |
| Authors: | Isobe, Kazuki Browse this author | | Akazawa, Masamichi Browse this author →KAKEN DB |
| Keywords: | XPS | | metal | | GaN interface | | Schottky barrier height | | GaN surface | | Fermi level pinning |
| Issue Date: | 1-Apr-2020 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 59 |
| Issue: | 4 |
| Start Page: | 046506 |
| Publisher DOI: | 10.35848/1347-4065/ab8024 |
| Abstract: | The effect of chemical surface treatment on the uncontrolled surface oxide at a GaN surface and on Fermi level pinning at subsequently formed metal/GaN interfaces was investigated for a GaN epitaxial layer grown on a GaN substrate. The impact of several chemical treatments, including photolithography, on the surface oxide and the resultant surface band bending at the GaN surface was examined by X-ray photoelectron spectroscopy. Surface band bending was reduced by the reduction in the amount of uncontrolled surface oxide. The metal/GaN interfaces formed subsequent to these chemical treatments were investigated by electrical measurement for Schottky barrier diodes. We found that the reduction in the amount of uncontrolled surface oxide leads to an increase in the slope factor in the metal-work-function dependence of the Schottky barrier height. The mechanism of Fermi level pinning at the metal/GaN interface is discussed. |
| Rights: | © 2020 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/80770 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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