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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

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Title: Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
Authors: Ochi, Ryota Browse this author
Maeda, Erika Browse this author
Nabatame, Toshihide Browse this author
Shiozaki, Koji Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 10-Jun-2020
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 10
Issue: 6
Start Page: 065215
Publisher DOI: 10.1063/5.0012687
Abstract: Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C.
Rights: Copyright (2020) Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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