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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
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Title: | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor |
Authors: | Ochi, Ryota Browse this author | Maeda, Erika Browse this author | Nabatame, Toshihide Browse this author | Shiozaki, Koji Browse this author | Sato, Taketomo Browse this author →KAKEN DB | Hashizume, Tamotsu Browse this author →KAKEN DB |
Issue Date: | 10-Jun-2020 |
Publisher: | American Institute of Physics (AIP) |
Journal Title: | AIP Advances |
Volume: | 10 |
Issue: | 6 |
Start Page: | 065215 |
Publisher DOI: | 10.1063/5.0012687 |
Abstract: | Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C. |
Rights: | Copyright (2020) Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License. | https://creativecommons.org/licenses/by/4.0/ |
Type: | article |
URI: | http://hdl.handle.net/2115/78882 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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