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Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam
| Title: | Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam |
| Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | | Kamoshida, Ryo Browse this author | | Murai, Shunta Browse this author | | Kachi, Tetsu Browse this author | | Uedono, Akira Browse this author →KAKEN DB |
| Issue Date: | 1-Jan-2021 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 60 |
| Issue: | 1 |
| Start Page: | 016502 |
| Publisher DOI: | 10.35848/1347-4065/abcf08 |
| Abstract: | Mg ions were implanted into Si-doped (5 x 10(17) cm(-3)) n-GaN at a dose of 1.5 x 10(11) or 1.5 x 10(12) cm(-2). MOS diodes were used to characterize the implanted GaN after 300 degrees C annealing for 3 h and after additional 500 degrees C annealing for 3 min. Although capacitance-voltage (C-V) characteristics varied with the dosage, the effects of acceptor-like defects induced by ion implantation were observed in the C-V characteristics independently of dosage and annealing temperature. A defect level at approximately 0.25 eV below the conduction band edge was detected electrically. By positron annihilation spectroscopy, its origin was identified as a divacancy consisting of Ga and N vacancies. It was found that its density compared with that of as-implanted GaN decreased with 300 degrees C annealing, and further increased with 500 degrees C annealing. This phenomenon was explained on the basis of the difference between the diffusion barriers of possible point defects. |
| Rights: | ©2021 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83719 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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