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TypeAuthor(s)TitleOther TitlesCitationCitation(alt)Issue Date
article (author version)Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, ToshikiAl2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers-Japanese Journal of Applied Physics. Pt. 2, Letters & express letters-15-Jun-2004
bulletin (article)岸田, 基也; 熊倉, 一英; 中越, 一彰; 山崎, 高宏; 本久, 順一; 福井, 孝志; 長谷川, 英機選択成長によるGaAs及びAlGaAs立体構造の作製と評価Fabrication and Characterization of GaAs and AlGaAs Micro-Pyramids by Selective MOCVD北海道大學工學部研究報告Bulletin of the Faculty of Engineering, Hokkaido University29-Jul-1994
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