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Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
| Title: | Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers |
| Authors: | Hashizume, Tamotsu Browse this author →KAKEN DB | | Anantathanasarn, Sanguan Browse this author | | Negoro, Noboru Browse this author | | Sano, Eiichi Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author | | Kumakura, Kazuhide Browse this author | | Makimoto, Toshiki Browse this author |
| Keywords: | AlGaN | | GaN | | Al2O3 | | HFET | | normally-off | | insulated gate |
| Issue Date: | 15-Jun-2004 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 2, Letters & express letters |
| Volume: | 43 |
| Issue: | 6B |
| Start Page: | L777 |
| End Page: | L779 |
| Publisher DOI: | 10.1143/JJAP.43.L777 |
| Abstract: | An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS= +4 V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation. |
| Rights: | Copyright © 2004 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33074 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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