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Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/33074

Title: Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
Authors: Hashizume, Tamotsu Browse this author →KAKEN DB
Anantathanasarn, Sanguan Browse this author
Negoro, Noboru Browse this author
Sano, Eiichi Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author
Kumakura, Kazuhide Browse this author
Makimoto, Toshiki Browse this author
Keywords: AlGaN
GaN
Al2O3
HFET
normally-off
insulated gate
Issue Date: 15-Jun-2004
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 2, Letters & express letters
Volume: 43
Issue: 6B
Start Page: L777
End Page: L779
Publisher DOI: 10.1143/JJAP.43.L777
Abstract: An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS= +4 V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation.
Rights: Copyright © 2004 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33074
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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