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Photoluminescence in implanted and doped silicon near room temperature

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Title: Photoluminescence in implanted and doped silicon near room temperature
Authors: Matsubara, Ichiro Browse this author
Sasahara, Shingo Browse this author
Mishina, Tomobumi Browse this author
Ishibashi, Yasuhiko Browse this author
Kobayashi, Toshihiko Browse this author
Nakahara, Jun'ichiro Browse this author
Keywords: silicon
phonon assisted
Issue Date: 2-May-2006
Publisher: WILEY-VCH
Journal Title: physica status solidi (b)
Volume: 243
Issue: 8
Start Page: 1893
End Page: 1897
Publisher DOI: 10.1002/pssb.200541220
Abstract: Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed.
Rights: Published in physica status solidi (b), 243(8), 1893 -1897, 2006.
Type: article (author version)
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 中原 純一郎

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