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Peer-reviewed Journal Articles, etc >
Photoluminescence in implanted and doped silicon near room temperature
| Title: | Photoluminescence in implanted and doped silicon near room temperature |
| Authors: | Matsubara, Ichiro Browse this author | | Sasahara, Shingo Browse this author | | Mishina, Tomobumi Browse this author | | Ishibashi, Yasuhiko Browse this author | | Kobayashi, Toshihiko Browse this author | | Nakahara, Jun'ichiro Browse this author |
| Keywords: | silicon | | photoluminescence | | indirect | | phonon assisted |
| Issue Date: | 2-May-2006 |
| Publisher: | WILEY-VCH |
| Journal Title: | physica status solidi (b) |
| Volume: | 243 |
| Issue: | 8 |
| Start Page: | 1893 |
| End Page: | 1897 |
| Publisher DOI: | 10.1002/pssb.200541220 |
| Abstract: | Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed. |
| Rights: | Published in physica status solidi (b), 243(8), 1893 -1897, 2006. |
| Relation: | http://www.interscience.wiley.com/ |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/10506 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 中原 純一郎
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