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Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure
| Title: | Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure |
| Authors: | Kasami, M. Browse this author | | Ogino, T. Browse this author | | Mishina, T. Browse this author | | Yamamoto, S. Browse this author →KAKEN DB | | Nakahara, J.5 Browse this author →KAKEN DB |
| Authors(alt): | 中原, 純一郎5 |
| Keywords: | coherent phonon | | photo-excited carrier | | bismuth | | high pressure | | band-overlapping |
| Issue Date: | Jul-2006 |
| Publisher: | Elsevier |
| Journal Title: | Journal of Luminescence |
| Volume: | 119 |
| Start Page: | 428 |
| End Page: | 432 |
| Publisher DOI: | 10.1016/j.jlumin.2006.01.028 |
| Abstract: | We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing. |
| Relation: | http://www.sciencedirect.com/science/journal/00222313 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/14424 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 中原 純一郎
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