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Epitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substrates

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Title: Epitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substrates
Authors: Kijima, H. Browse this author
Ishikawa, T. Browse this author
Marukame, T. Browse this author
Koyama, H. Browse this author
Matsuda, K. Browse this author →KAKEN DB
Uemura, T. Browse this author →KAKEN DB
Yamamoto, M. Browse this author →KAKEN DB
Keywords: Co-based full-Heusler alloy
Co2MnSi
epitaxial growth
half-metallic
MgO
Issue Date: Oct-2006
Publisher: IEEE
Journal Title: IEEE Transactions on Magnetics
Volume: 42
Issue: 10
Start Page: 2688
End Page: 2690
Publisher DOI: 10.1109/TMAG.2006.878850
Abstract: Full-Heusler alloy Co₂MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at 600℃. X-ray pole figure measurements of the annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallized in the L2₁ structure. The annealed films had sufficiently flat surface morphologies with root-mean-square roughness of about 0.22 nm at a film thickness of 50 nm. The saturation magnetization of the annealed films was 4.5μ B/f.u. at 10 K, corresponding to about 90% of the Slater–Pauling value for CMS.
Rights: ©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Type: article
URI: http://hdl.handle.net/2115/14896
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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