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Microstructures of SiO2 scales formed on MoSi2

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この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/15823

タイトル: Microstructures of SiO2 scales formed on MoSi2
著者: Kurokawa, Kazuya 著作を一覧する
Goto, Daichi 著作を一覧する
Kuchino, Jyunichi 著作を一覧する
Yamauchi, Akira 著作を一覧する
Shibayama, Tamaki 著作を一覧する
Takahashi, Heishichiro 著作を一覧する
キーワード: oxidation
MoSi2
transmission electron microscopy (TEM)
microstructure of oxide scale
発行日: 2006年
出版者: Trans Tech Publications
誌名: Materials Science Forum
巻: 522
号: 523
開始ページ: 595
終了ページ: 602
抄録: The microstructures of oxide scales formed on MoSi2 at medium-high temperatures in air were observed by TEM. Based on the observation, relationships between oxidation temperature and formation of MoO3 and crystallization of amorphous SiO2 scales were investigated. At 1273 K and 1373 K, the oxide scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 particles. The oxide scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the oxide scale formed at 1773 K appreciably increased due to crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiO2 scale.
Rights: the original is available online at www.scientific.net. High-Temperature Oxidation and Corrosion 2005
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/15823
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 山内 啓

 

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