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Microstructures of SiO2 scales formed on MoSi2
| Title: | Microstructures of SiO2 scales formed on MoSi2 |
| Authors: | Kurokawa, Kazuya Browse this author →KAKEN DB | | Goto, Daichi Browse this author | | Kuchino, Jyunichi Browse this author | | Yamauchi, Akira Browse this author | | Shibayama, Tamaki Browse this author | | Takahashi, Heishichiro Browse this author |
| Keywords: | oxidation | | MoSi2 | | transmission electron microscopy (TEM) | | microstructure of oxide scale |
| Issue Date: | 2006 |
| Publisher: | Trans Tech Publications |
| Journal Title: | Materials Science Forum |
| Volume: | 522 |
| Issue: | 523 |
| Start Page: | 595 |
| End Page: | 602 |
| Abstract: | The microstructures of oxide scales formed on MoSi2 at medium-high temperatures in air were observed by TEM. Based on the observation, relationships between oxidation temperature and formation of MoO3 and crystallization of amorphous SiO2 scales were investigated. At 1273 K and 1373 K, the oxide scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 particles. The oxide scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the oxide scale formed at 1773 K appreciably increased due to crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiO2 scale. |
| Rights: | the original is available online at www.scientific.net. High-Temperature Oxidation and Corrosion 2005 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/15823 |
| Appears in Collections: | エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 山内 啓
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