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Microstructures of SiO2 scales formed on MoSi2

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/15823

Title: Microstructures of SiO2 scales formed on MoSi2
Authors: Kurokawa, Kazuya Browse this author →KAKEN DB
Goto, Daichi Browse this author
Kuchino, Jyunichi Browse this author
Yamauchi, Akira Browse this author
Shibayama, Tamaki Browse this author
Takahashi, Heishichiro Browse this author
Keywords: oxidation
MoSi2
transmission electron microscopy (TEM)
microstructure of oxide scale
Issue Date: 2006
Publisher: Trans Tech Publications
Journal Title: Materials Science Forum
Volume: 522
Issue: 523
Start Page: 595
End Page: 602
Abstract: The microstructures of oxide scales formed on MoSi2 at medium-high temperatures in air were observed by TEM. Based on the observation, relationships between oxidation temperature and formation of MoO3 and crystallization of amorphous SiO2 scales were investigated. At 1273 K and 1373 K, the oxide scales had a structure consisting of amorphous SiO2 with small amounts of fine MoO3 particles. The oxide scales at 1573 K and 1773 K had a structure consisting of amorphous and crystalline SiO2. Growth rate of the oxide scale formed at 1773 K appreciably increased due to crystallization of amorphous SiO2. It was thought that the increase in the oxidation rate at 1773 K was caused by a change in the diffusion mechanism from O2 diffusion to lattice diffusion of O2- through SiO2. In addition, the diffusion coefficient of oxygen was estimated from the growth rate of SiO2 scale.
Rights: the original is available online at www.scientific.net. High-Temperature Oxidation and Corrosion 2005
Type: article (author version)
URI: http://hdl.handle.net/2115/15823
Appears in Collections:エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山内 啓

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