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Hokkaido University Collection of Scholarly and Academic Papers >
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Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier
| Title: | Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co[sub 2]MnSi thin film and a MgO tunnel barrier |
| Authors: | Ishikawa, T. Browse this author | | Marukame, T. Browse this author | | Kijima, H. Browse this author | | Matsuda, K.-I. Browse this author →KAKEN DB | | Uemura, T. Browse this author →KAKEN DB | | Arita, M. Browse this author →KAKEN DB | | Yamamoto, M. Browse this author →KAKEN DB |
| Issue Date: | 6-Nov-2006 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 89 |
| Issue: | 19 |
| Start Page: | 192505 |
| Publisher DOI: | 10.1063/1.2378397 |
| Abstract: | Fully epitaxial, exchange-biased magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. The microfabricated CMS/MgO/Co50Fe50 MTJs exhibited relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. The bias voltage dependence of differential conductance (dI/dV) for the parallel and antiparallel magnetization configurations suggested the existence of a basic energy gap structure for the minority-spin band of the CMS electrode with an energy difference of about 0.4 eV between the bottom of the vacant minority-spin conduction band and the Fermi level. ©2006 American Institute of Physics |
| Rights: | Copyright © 2006 American Institute of Physics |
| Type: | article |
| URI: | http://hdl.handle.net/2115/16890 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 山本 眞史
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