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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >

Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/17219

Title: Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing
Authors: Marukame, Takao Browse this author
Ishikawa, Takayuki Browse this author
Hakamata, Shinya Browse this author
Matsuda, Ken-ichi Browse this author →KAKEN DB
Uemura, Tetsuya Browse this author →KAKEN DB
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 1-Jan-2007
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 90
Issue: 1
Start Page: 012508
Publisher DOI: 10.1063/1.2428412
Abstract: Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50/Ru/Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10/IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2 K. A high tunneling spin polarization of 0.88 at 4.2 K was estimated for epitaxial CCFA films with the B2 structure. ©2007 American Institute of Physics
Rights: Copyright © 2007 American Institute of Physics
Type: article
URI: http://hdl.handle.net/2115/17219
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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