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Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski-Krastanow mode

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Title: Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski-Krastanow mode
Authors: Shiramine, Ken-ichi Browse this author →KAKEN DB
Muto, Shunichi Browse this author →KAKEN DB
Issue Date: 2007
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 101
Issue: 033527
Publisher DOI: 10.1063/1.2434806
Abstract: The tip artifact in atomic force microscopy (AFM) observations of InAs islands was evaluated quantitatively. The islands were grown in the Stranski-Krastanow mode of molecular beam epitaxy. The width and height of the islands were determined using transmission electron microscopy (TEM) and AFM. The average [10] in-plane width and height determined using TEM excluding native oxide were 22 and 7 nm, respectively; those determined using AFM including the oxide were 35 and 8 nm, respectively. The difference in width was due to the oxide and the tip artifact. The sizes including the oxide were deduced from TEM observations to be a width of 27 nm and a height of 6 nm with correction for the thickness of the oxide. The residual difference of 8 nm between the width determined using AFM and that determined using TEM including the oxide was ascribed to the tip artifact. The results enable us to determine the actual size of the islands from their AFM images.
Description: Copyright © 2007 American Institute of Physics
Type: article
URI: http://hdl.handle.net/2115/17254
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 白峰 賢一

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