HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser

Files in This Item:
D&RM15_11-12.pdf634.22 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/17257

Title: Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser
Authors: Fujita, F. Browse this author →KAKEN DB
Oshiki, Y. Browse this author
Kaneko, J.H. Browse this author →KAKEN DB
Homma, A. Browse this author
Tsuji, K. Browse this author
Meguro, K. Browse this author
Yamamoto, Y. Browse this author
Imai, T. Browse this author
Watanabe, H. Browse this author
Teraji, T. Browse this author
Kawamura, S. Browse this author
Furusaka, M. Browse this author
Keywords: CVD diamond films
Carrier drift velocity
Time-of-flight
UV pulsed laser
Issue Date: 2006
Publisher: Elsevier B.V.
Journal Title: Diamond and Related Materials
Volume: 15
Issue: 11-12
Start Page: 1921
End Page: 1925
Publisher DOI: 10.1016/j.diamond.2006.09.004
Abstract: A fast TOF measurement system with 150 ps time resolution for transport behavior of free charge carriers in an intrinsic diamond film by using a UV pulsed laser was developed. The 213 nm UV laser light narrowed to approximately 80 μm widths could locally create hole–electron pairs in selected locations on a diamond film between two parallel electrodes on the surface. This system measured accurate charge transport characteristics in a diamond film, because created charge carriers moved in a part of the diamond film where they did not get any influence from the laser irradiation. Diamond samples used for verification of the TOF system were intrinsic CVD diamond films with thickness between 4 and 10 μm grown on HP/HT diamond substrates. Transit time of holes for one diamond film was 4.7 ns with a traverse distance of 250 μm. The local irradiation of laser made it possible to measure transport characteristics of electrons and holes separately. In addition, it substantially reduced the influence of photoelectron, because the laser beam did not irradiate electrodes. Through several examinations, excellent reliability of the TOF system was confirmed.
Relation: http://www.sciencedirect.com/science/journal/09259635
Type: article (author version)
URI: http://hdl.handle.net/2115/17257
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 藤田 文行

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University