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Four-State Magnetoresistance in Epitaxial CoFe-Based Magnetic Tunnel Junctions

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/26442

Title: Four-State Magnetoresistance in Epitaxial CoFe-Based Magnetic Tunnel Junctions
Authors: Uemura, T. Browse this author →KAKEN DB
Marukame, T. Browse this author
Matsuda, K. Browse this author
Yamamoto, M. Browse this author →KAKEN DB
Issue Date: Jun-2007
Publisher: IEEE
Journal Title: IEEE Transactions on Magnetics
Volume: 43
Issue: 6
Start Page: 2791
End Page: 2793
Publisher DOI: 10.1109/TMAG.2007.893415
Abstract: A four-state magnetic random access memory (MRAM) was developed using an epitaxial Co50Fe50-MgO-Co50Fe 50 magnetic tunnel junction (MTJ) with a tunnel magnetoresistance (TMR) ratio of 145% at room temperature (RT). Four remanent magnetization states in the single-crystalline Co50Fe50 electrode, due to the cubic anisotropy with easy axes of the lang110rang directions, result in four possible angular-dependent TMRs, each separated by more than 20% at RT. Analysis of the asteroid curve for Co50Fe50 indicated that the magnetic field along 22.5deg from the lang110rang directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells.
Rights: ©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. IEEE, IEEE TRANSACTIONS ON MAGNETICS, Vol. 43-6, 2007, pp. 2791-2793
Type: article
URI: http://hdl.handle.net/2115/26442
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植村 哲也

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