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Fast migration of fluoride ions in growing anodic titanium oxide

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Title: Fast migration of fluoride ions in growing anodic titanium oxide
Authors: Habazaki, H. Browse this author →KAKEN DB
Fushimi, K. Browse this author →KAKEN DB
Shimizu, K. Browse this author
Skeldon, P. Browse this author
Thompson, G.E. Browse this author
Keywords: Anodic film
Ionic transport
Fluoride ions
Issue Date: May-2007
Publisher: Elsevier B.V.
Journal Title: Electrochemistry Communications
Volume: 9
Issue: 5
Start Page: 1222
End Page: 1227
Publisher DOI: 10.1016/j.elecom.2006.12.023
Abstract: The rapid inward migration of fluoride ions in growing anodic titanium oxide under a high electric field has been elucidated by anodizing a Ti–12 at% silicon alloy, where film growth proceeds at nearly 100% efficiency in selected electrolytes. Further, incorporated silicon species in the anodic film are immobile, acting as marker species. The migration rate of fluoride ions is determined precisely by three-stage anodizing, consisting of initial anodic film formation at a constant current density to 50 V in ammonium pentaborate electrolyte, subsequent incorporation of fluoride ions by reanodizing to 55 V in ammonium fluoride electrolyte and, finally, anodizing again in ammonium pentaborate electrolyte at high current efficiency. The resultant films were analyzed by glow discharge optical emission spectroscopy to reveal the depth distribution of fluoride ions and the location of the silicon marker species. The fluoride ions migrate inward at twice the rate of O2− ions. Consequently, anodizing of titanium in fluoride-containing electrolytes develops a fluoride-rich layer that separates the alloy substrate from the anodic oxide, with eventual detachment of the film from the substrate.
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

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