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Influence of silicon on the growth of barrier-type anodic films on titanium

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Title: Influence of silicon on the growth of barrier-type anodic films on titanium
Authors: Tanvir, M. Tauseef Browse this author
Fushimi, K. Browse this author
Shimizu, K. Browse this author
Nagata, S. Browse this author
Skeldon, P. Browse this author
Thompson, G.E. Browse this author
Habazaki, H. Browse this author →KAKEN DB
Keywords: Anodic oxide
Ionic transport
Anodic titania
Amorphous-to-crystalline transition
Issue Date: 1-Aug-2007
Publisher: Elsevier Ltd.
Journal Title: Electrochimica Acta
Volume: 52
Issue: 24
Start Page: 6834
End Page: 6840
Publisher DOI: 10.1016/j.electacta.2007.04.113
Abstract: Amorphous anodic titania, stabilised by incorporation of silicon species, is shown to grow to high voltages on sputter-deposited, single-phase Ti–Si alloys during anodizing at a constant current density in ammonium pentaborate electrolyte. The films comprise two main layers, with silicon species confined to the inner layers. An amorphous-to-crystalline transition occurs at 60 V on the Ti–6 at.% Si alloy, while the transition is suppressed to voltages above 140 V on alloys with 12 and 26 at.% silicon. The crystalline oxide, nucleated at a depth of 40% of the film thickness, is associated with the presence of a precursor of crystalline oxide in the pre-existing air-formed oxide. The modified structure of the air-formed oxide due to increased incorporation of silicon species suppresses the amorphous-to-crystalline transition until the onset of dielectric breakdown. The transport numbers of cations and anions during growth of the anodic oxides are independent of the concentration of silicon species in the inner layer, despite the marked change in the field strength.
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

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