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Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

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Title: Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films
Authors: Tanaka, Keiji1 Browse this author →KAKEN DB
Authors(alt): 田中, 啓司1
Keywords: Nucleation
Atomic force and scanning tunneling microscopy
Issue Date: 15-Jun-2007
Publisher: Elsevier B.V.
Journal Title: Journal of Non-Crystalline Solids
Volume: 353
Issue: 18-21
Start Page: 1899
End Page: 1903
Publisher DOI: 10.1016/j.jnoncrysol.2007.02.020
Abstract: Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge2Sb2Te5 films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of 10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge2Sb2Te5 films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中 啓司

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