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Visualization of induced charge in an organic thin-film transistor by cross-sectional potential mapping

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タイトル: Visualization of induced charge in an organic thin-film transistor by cross-sectional potential mapping
著者: Ikeda, Susumu 著作を一覧する
Shimada, Toshihiro 著作を一覧する
Kiguchi, Manabu 著作を一覧する
Saiki, Koichiro 著作を一覧する
発行日: 2007年 5月 1日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 101
号: 9
開始ページ: 094509
出版社 DOI: 10.1063/1.2734077
抄録: Kelvin probe force microscopy was applied to the cross-sectional potential imaging of a working organic thin-film transistor (OTFT). The bottom-contact-type OTFT with an active layer of copper-phthalocyanine (CuPc) was cleaved and internal potential distribution of its channel region was visualized. The potential distribution on the cross section changed depending on the applied drain and gate voltage. Horizontal potential distribution in the semiconductor film from source to drain direction was roughly consistent with the results of surface potential imaging previously reported. Vertical potential distribution from bottom (gate) to top (CuPc film) showed that a potential peak appeared along the semiconductor/insulator interface when a negative voltage was applied to the gate. The charge injection process is discussed based on the visualized potential peak at the interface. ©2007 American Institute of Physics
Rights: Copyright © 2007 American Institute of Physics
Relation (URI): http://jap.aip.org/jap/
資料タイプ: article
URI: http://hdl.handle.net/2115/29731
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 木口 学

 

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