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Metal-induced gap states in epitaxial organic-insulator/metal interfaces

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Title: Metal-induced gap states in epitaxial organic-insulator/metal interfaces
Authors: Kiguchi, Manabu Browse this author
Arita, Ryotaro Browse this author
Yoshikawa, Genki Browse this author
Tanida, Yoshiaki Browse this author
Ikeda, Susumu Browse this author
Entani, Shiro Browse this author
Nakai, Ikuyo Browse this author
Kondoh, Hiroshi Browse this author
Ohta, Toshiaki Browse this author
Saiki, Koichiro Browse this author
Aoki, Hideo Browse this author
Issue Date: Aug-2005
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 72
Issue: 7
Start Page: 075446
Publisher DOI: 10.1103/PhysRevB.72.075446
Abstract: We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.
Rights: Copyright © 2005 American Physical Society
Type: article
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木口 学

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