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Metal-induced gap states in epitaxial organic-insulator/metal interfaces
| Title: | Metal-induced gap states in epitaxial organic-insulator/metal interfaces |
| Authors: | Kiguchi, Manabu Browse this author | | Arita, Ryotaro Browse this author | | Yoshikawa, Genki Browse this author | | Tanida, Yoshiaki Browse this author | | Ikeda, Susumu Browse this author | | Entani, Shiro Browse this author | | Nakai, Ikuyo Browse this author | | Kondoh, Hiroshi Browse this author | | Ohta, Toshiaki Browse this author | | Saiki, Koichiro Browse this author | | Aoki, Hideo Browse this author |
| Issue Date: | Aug-2005 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review B |
| Volume: | 72 |
| Issue: | 7 |
| Start Page: | 075446 |
| Publisher DOI: | 10.1103/PhysRevB.72.075446 |
| Abstract: | We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping. |
| Rights: | Copyright © 2005 American Physical Society |
| Relation: | http://www.aps.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/29745 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 木口 学
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