Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/29747

Title:	Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces
Authors:	Kiguchi, Manabu Browse this author
	Yoshikawa, Genki Browse this author
	Ikeda, Susumu Browse this author
	Saiki, Koichiro Browse this author
Issue Date:	6-Apr-2005
Publisher:	American Physical Society
Journal Title:	Physical Review B
Volume:	71
Issue:	15
Start Page:	153401
Publisher DOI:	10.1103/PhysRevB.71.153401
Abstract:	The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x-ray absorption fine structure (NEXAFS) and by comparing the cation and anion-edge NEXAFS. The thickness-dependent NEXAFS shows that the decay length of MIGS depends on an alkali-halide rather than a metal, and it is larger for alkali-halides with smaller band gap energies. By comparing the Cl-edge and K-edge NEXAFS for KCl/Cu(001), MIGS are found to be states localizing at anion sites.
Rights:	Copyright © 2005 American Physical Society
Relation:	http://www.aps.org/
Type:	article
URI:	http://hdl.handle.net/2115/29747
Appears in Collections:	理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木口学

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