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Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

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Title: Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces
Authors: Kiguchi, Manabu Browse this author
Yoshikawa, Genki Browse this author
Ikeda, Susumu Browse this author
Saiki, Koichiro Browse this author
Issue Date: 6-Apr-2005
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 71
Issue: 15
Start Page: 153401
Publisher DOI: 10.1103/PhysRevB.71.153401
Abstract: The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x-ray absorption fine structure (NEXAFS) and by comparing the cation and anion-edge NEXAFS. The thickness-dependent NEXAFS shows that the decay length of MIGS depends on an alkali-halide rather than a metal, and it is larger for alkali-halides with smaller band gap energies. By comparing the Cl-edge and K-edge NEXAFS for KCl/Cu(001), MIGS are found to be states localizing at anion sites.
Rights: Copyright © 2005 American Physical Society
Type: article
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木口 学

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