Metal induced gap states at alkali halide/metal interface


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/29771

Title:	Metal induced gap states at alkali halide/metal interface
Authors:	Kiguchi, Manabu Browse this author
	Yoshikawa, Genki Browse this author
	Ikeda, Susumu Browse this author
	Saiki, Koichiro Browse this author
Keywords:	Metal–insulator interfaces
	Near-edge extended X-ray absorption fine structure
	Alkali halides
Issue Date:	15-Oct-2004
Publisher:	Elsevier B.V.
Journal Title:	Applied Surface Science
Volume:	237
Issue:	1-4
Start Page:	495
End Page:	498
Publisher DOI:	10.1016/j.apsusc.2004.06.127
Abstract:	The electronic state of a KCl/Cu(0 0 1) interface was investigated using the Cl K-edge near-edge X-ray absorption fine structure (NEXAFS). A pre-peak observed on the bulk edge onset of thin KCl films has a similar feature to the peak at a LiCl/Cu(0 0 1) interface, which originates from the metal induced gap state (MIGS). The present result indicates that the MIGS is formed universally at alkali halide/metal interfaces. The decay length of MIGS to an insulator differs from each other, mainly due to the difference in the band gap energy of alkali halide.
Relation:	http://www.sciencedirect.com/science/journal/01694332
Type:	article (author version)
URI:	http://hdl.handle.net/2115/29771
Appears in Collections:	理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木口学

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