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Metal-induced gap states at well defined alkali-halide/metal interfaces.
| Title: | Metal-induced gap states at well defined alkali-halide/metal interfaces. |
| Authors: | Kiguchi, Manabu Browse this author | | Arita, Ryotaro Browse this author | | Yoshikawa, Genki Browse this author | | Tanida, Yoshiaki Browse this author | | Katayama, Masao Browse this author | | Saiki, Koichiro Browse this author | | Koma, Atsushi Browse this author | | Aoki, Hideo Browse this author |
| Issue Date: | 16-May-2003 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review Letters |
| Volume: | 90 |
| Issue: | 19 |
| Start Page: | 196803 |
| Publisher DOI: | 10.1103/PhysRevLett.90.196803 |
| PMID: | 12785970 |
| Abstract: | In order to search for states specific to insulator/metal interfaces, we have studied epitaxially grown interfaces with element-selective near edge x-ray absorption fine structure. An extra peak is observed below the bulk edge onset for LiCl films on Cu and Ag substrates. The nature of chemical bonds as probed by x-ray photoemission spectroscopy and Auger electron spectroscopy remains unchanged, so we regard this as evidence for metal-induced gap states (MIGS) formed by the proximity to a metal, rather than local bonds at the interface. The dependence on the film thickness shows that the MIGS are as thin as one monolayer. An ab initio electronic structure calculation supports the existence of the MIGS that are strongly localized at the interface. |
| Rights: | Copyright © 2003 American Physical Society |
| Relation: | http://www.aps.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/29774 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 木口 学
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