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Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer

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Title: Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer
Authors: Fu, Zhengwen Browse this author
Takahashi, Hiroshi Browse this author
Kasai, Seiya Browse this author
Hasegawa, Hideki Browse this author
Keywords: InP
InGaAs
surface passivation
MISFET
XPS
UHV contactless C-V
Issue Date: Feb-2002
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers
Volume: 41
Issue: 2B
Start Page: 1062
End Page: 1066
Publisher DOI: 10.1143/JJAP.41.1062
Abstract: Attempts were made to characterize and optimize the novel oxide-free insulated gate structure for InP, having an ultrathin Si interface control layer (Si ICL). An in situ X-ray photoelectron spectroscopy (XPS) study indicated that P deficiency took place on the InP surface by the irradiation of a high-energy Si beam during the MBE growth of Si ICL. Based on this, a modified gate structure having an In0.53Ga0.47As cap layer on the InP surface for prevention of phosphorus loss was proposed and its interface properties were investigated. A careful design for quantum state control indicated that the Si ICL thickness should be reduced down to 0.5 nm for the InGaAs cap thickness of 3 nm. In situ XPS spectra showed that no pronounced desorption of As or P took place from the surface in the new gate structure. In situ contactless C-V measurement showed a low and wide interface state density distribution with a minimum of 2×1011 cm-2eV-1. An InP MISFET test device with a gate length of 2 μm exhibited a maximum gm of 123 mS/mm and a high drain current of 389 mA/mm. These results indicated the effectiveness of the novel oxide-free insulated gate structure for application to InP power MISFETs as well as to surface passivation.
Rights: Copyright © 2002 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/33077
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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