|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Information Science and Technology / Faculty of Information Science and Technology >
Peer-reviewed Journal Articles, etc >
Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures
| Title: | Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures |
| Authors: | Endo, Makoto Browse this author | | Jin, Zhi Browse this author | | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | reactive ion beam etching (RIBE) | | methane-based gas mixture | | nitrogen gas | | gallium nitride (GaN) | | aluminum gallium nitride (AlGaN) | | nanostructure |
| Issue Date: | Apr-2002 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics. Pt. 1, Regular papers, short notes & review papers |
| Volume: | 41 |
| Issue: | 4B |
| Start Page: | 2689 |
| End Page: | 2693 |
| Publisher DOI: | 10.1143/JJAP.41.2689 |
| Abstract: | The basic characteristics of ECR-reactive ion beam etching (RIBE) of GaN and AlGaN using methane-based mixtures was studied for nanowire fabrication is studied. Both of GaN and AlGaN/GaN heterostructure can be etched by using a gas mixture of CH4/H2/Ar at a low etching rate of about 10nm/min giving nm accuracy. <-1100> and <2-1-10> line pattern etching showed {0-110} and {11-21} sidewall facets, respectively, indicating its chemical reaction dominant low-damage nature. By conventional CH4-based gas mixture, the etching saturates at a depth of a few 100 nm and roughness of surface increases with time, since the surface reaction produced Ga rich surface and this disturbs the etching process. By adding nitrogen into the gas mixture (CH4/H2/Ar/N2 = 5/15/1.5/4.5 sccm), surface stoichiometry is dramatically improved. This also gives smooth etched surface with roughness of 2 nm enough for nanostructure fabrication. By using the optimized etching condition with nitrogen addition to the gas mixture, an AlGaN/GaN nanowire structure with a wire width of 110 nm has been successfully fabricated. |
| Rights: | Copyright © 2002 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/33083 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 葛西 誠也
|
