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Inhibition of field crystallization of anodic niobium oxide by incorporation of silicon species

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Title: Inhibition of field crystallization of anodic niobium oxide by incorporation of silicon species
Authors: Habazaki, H. Browse this author →KAKEN DB
Ogasawara, T. Browse this author
Fushimi, K. Browse this author →KAKEN DB
Shimizu, K. Browse this author
Nagata, S. Browse this author
Izumi, T. Browse this author
Skeldon, P. Browse this author
Thompson, G.E. Browse this author
Keywords: anodic oxide
niobium
field crystallization
dielectric oxide
silicon incorporation
Issue Date: 30-Nov-2008
Publisher: Elsevier
Journal Title: Electrochimica Acta
Volume: 53
Issue: 28
Start Page: 8203
End Page: 8210
Publisher DOI: 10.1016/j.electacta.2008.06.032
Abstract: The present work demonstrates effective inhibition of field crystallization of amorphous anodic niobium oxide by incorporation of silicon species from substrate. The field crystallization, detrimental for capacitor application of niobium, occurs during anodizing of magnetron sputtered niobium at 100 V in 0.1 mol dm-3 ammonium pentaborate electrolyte at 333 K, while amorphous structure of the anodic oxide is totally retained during anodizing of magnetron sputtered Nb-12 at% Si. Even after prior thermal treatment in air, which accelerates field crystallization of anodic oxide on niobium, no crystallization occurs on the Nb-12 at% Si. Through examination of the crystallization behaviours of anodic films formed on a thin Nb-12 at% Si layer superimposed on a niobium layer as well as on a thin niobium layer superimposed on an Nb-12 at% Si layer, it has been confirmed that air-formed oxide or thermal oxide becomes a nucleation site for crystallization. Modification of the air-formed or thermal oxide by incorporation of silicon species inhibits the nucleation of crystalline oxide. The modification, however, does not influence the growth of crystalline oxide. The growth is suppressed by continuous incorporation of silicon species into anodic film from the substrate during anodizing.
Type: article (author version)
URI: http://hdl.handle.net/2115/35511
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

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