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Inhibition of field crystallization of anodic niobium oxide by incorporation of silicon species

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タイトル: Inhibition of field crystallization of anodic niobium oxide by incorporation of silicon species
著者: Habazaki, H. 著作を一覧する
Ogasawara, T. 著作を一覧する
Fushimi, K. 著作を一覧する
Shimizu, K. 著作を一覧する
Nagata, S. 著作を一覧する
Izumi, T. 著作を一覧する
Skeldon, P. 著作を一覧する
Thompson, G.E. 著作を一覧する
キーワード: anodic oxide
niobium
field crystallization
dielectric oxide
silicon incorporation
発行日: 2008年11月30日
出版者: Elsevier
誌名: Electrochimica Acta
巻: 53
号: 28
開始ページ: 8203
終了ページ: 8210
出版社 DOI: 10.1016/j.electacta.2008.06.032
抄録: The present work demonstrates effective inhibition of field crystallization of amorphous anodic niobium oxide by incorporation of silicon species from substrate. The field crystallization, detrimental for capacitor application of niobium, occurs during anodizing of magnetron sputtered niobium at 100 V in 0.1 mol dm-3 ammonium pentaborate electrolyte at 333 K, while amorphous structure of the anodic oxide is totally retained during anodizing of magnetron sputtered Nb-12 at% Si. Even after prior thermal treatment in air, which accelerates field crystallization of anodic oxide on niobium, no crystallization occurs on the Nb-12 at% Si. Through examination of the crystallization behaviours of anodic films formed on a thin Nb-12 at% Si layer superimposed on a niobium layer as well as on a thin niobium layer superimposed on an Nb-12 at% Si layer, it has been confirmed that air-formed oxide or thermal oxide becomes a nucleation site for crystallization. Modification of the air-formed or thermal oxide by incorporation of silicon species inhibits the nucleation of crystalline oxide. The modification, however, does not influence the growth of crystalline oxide. The growth is suppressed by continuous incorporation of silicon species into anodic film from the substrate during anodizing.
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/35511
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 幅崎 浩樹

 

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