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Interfacial reactions in Nb/NbSi2 and Nb/NbSi2-B systems

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Title: Interfacial reactions in Nb/NbSi2 and Nb/NbSi2-B systems
Authors: Ukegawa, Misa Browse this author
Yamauchi, Akira Browse this author
Kobayashi, Akira Browse this author
Kurokawa, Kazuya Browse this author →KAKEN DB
Keywords: Nb/NbSi2 reaction
Boron
Reaction mechanism
Growth kinetics
Issue Date: 4-Sep-2008
Publisher: Elsevier
Journal Title: Vacuum
Volume: 83
Issue: 1
Start Page: 157
End Page: 160
Publisher DOI: 10.1016/j.vacuum.2008.04.080
Abstract: For the use of Nb-base alloys at high temperatures, a high oxidation resistant coating such as a NbSi2 coating is required. In the present study, to clarify the physico-chemical compatibility between Nb and NbSi2, the extent of the interfacial reaction and the reaction products were studied at temperatures ranging from 1573 to 1773 K. Growth of the reaction layer formed in the interfacial reactions was caused by the preferential diffusion of Si towards to the Nb side, leading to the formation of a Nb5Si3 layer. The growth followed a parabolic rate law, and the growth rate constant was expressed by kp (m^2 s^-1) =7.98 x10^-10 exp(-131.84 kJmol^-1/RT). In addition, behavior of boron in the Nb/NbSi2 interfacial reaction was clarified.
Type: article (author version)
URI: http://hdl.handle.net/2115/35633
Appears in Collections:エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山内 啓

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