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Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
| Title: | Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Nakamura, Tatsuya Browse this author | | Rahmani, Shaharin Fadzli Bin Abd Browse this author | | Shiratori, Yuta Browse this author |
| Keywords: | three-branch nanowire junction (TBJ) | | GaAs | | Schottky wrap gate (WPG) | | nonlinear voltage transfer | | analytical model |
| Issue Date: | 25-Jun-2008 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics |
| Volume: | 47 |
| Issue: | 6 |
| Start Page: | 4958 |
| End Page: | 4964 |
| Publisher DOI: | 10.1143/JJAP.47.4958 |
| Abstract: | The nonlinear electrical characteristics of GaAs-based three-branch nanowire junction (TBJ) devices having Schottky wrap gates (WPGs) are investigated experimentally and theoretically, focusing on the nonlinear mechanism at room temperature in devices with large dimensions and the improvement of voltage transfer efficiency. Input-output voltage transfer curve, V_out-V_in, is characterized by changing nanowire width, W, temperature, T, and WPG gate voltage, VG, systematically. At room temperature, a bell-shaped V_out-V_in voltage curve is observed even in the device having a nanowire width of 1,500 nm, which is ten times larger than the electron mean free path. With decreasing wire width or temperature, the output curves are sharpened and curvature in the low-input-voltage region increases. The curvature rapidly increases and voltage transfer efficiency, ΔV_out/ΔV_in, approaches unity when VG is decreased into the subthreshold region. A simple and compact model for the nonlinear characteristics in the nonballistic regime is introduced. The rapid change of the curvature and complex curve in the subthreshold region under VG control is due to the switching of the branch condition from resistive to capacitive by depletion underneath the WPG. |
| Rights: | © 2008 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/38670 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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