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Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/38671

Title: Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
Authors: Shiratori, Yuta Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Keywords: quantum wire transistor
GaAs
Schottky wrap gate
power consumption
switching voltage
operation temperature
Issue Date: 25-Apr-2008
Publisher: Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 47
Issue: 4
Start Page: 3086
End Page: 3090
Publisher DOI: 10.1143/JJAP.47.3086
Abstract: The effect of size reduction on switching characteristics is investigated experimentally for the low-switching-power operation of GaAs-based quantum wire transistors (QWRTr's) utilizing etched AlGaAs/GaAs nanowires controlled by Schottky wrap gates (WPGs). WPG QWRTr's in which the wire width, W, and gate length, L_G, were systematically changed are fabricated and characterized with respect to operation temperature, switching voltage, ΔV_G, gate voltage to Fermi energy scaling factor, α, and power-delay product, PDP. When W is less than 200 nm, more than 80% of the fabricated devices exhibit quantized conductance at 30 K. The device with W=40 nm shows a large α of 0.7. Decreasing LG into the sub-100-nm range was found to be effective for improving power consumption, since the short channel effect was suppressed by tight potential control in the WPG structure.
Rights: © 2008 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/38671
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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