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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation
| Title: | Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation |
| Authors: | Ono, Shota Browse this author | | Shima, Hiroyuki Browse this author →KAKEN DB |
| Keywords: | electrical resistivity | | electron-electron scattering | | nanostructured materials | | semiconductor thin films |
| Issue Date: | Jun-2009 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review B |
| Volume: | 79 |
| Issue: | 23 |
| Start Page: | 235407 |
| Publisher DOI: | 10.1103/PhysRevB.79.235407 |
| Abstract: | The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail. |
| Rights: | ©2009 The American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/38831 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 島 弘幸
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