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Float zone growth of Dy:GdVO4 single crystals for potential use in solid-state yellow lasers
| Title: | Float zone growth of Dy:GdVO4 single crystals for potential use in solid-state yellow lasers |
| Authors: | Higuchi, Mikio Browse this author →KAKEN DB | | Sasaki, Ryo Browse this author | | Takahashi, Junichi Browse this author |
| Keywords: | Floating zone technique | | Vanadates | | Solid-state lasers |
| Issue Date: | 15-Oct-2009 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Journal of Crystal Growth |
| Volume: | 311 |
| Issue: | 21 |
| Start Page: | 4549 |
| End Page: | 4552 |
| Publisher DOI: | 10.1016/j.jcrysgro.2009.08.028 |
| Abstract: | Single crystals of dysprosium-doped gadolinium orthovanadate (Dy:GdVO4) were successfully grown by the floating zone method and their fluorescence properties were investigated. The as-grown crystals did not contain any macroscopic defects such as cracks and inclusions for any Dy-concentration of up to 4 at%. Every crystal showed optical homogeneity under observation with a polarizing microscope; that is, no low-angle grain boundaries and growth striations were detected. In the visible region two distinct, fluorescence bands were observed around 480 and 575 nm, corresponding to F-4(9/2) → H-6(15/2) and F-4(9/2) → H-6(13/2) transitions, respectively. The excitation spectrum for the emission of 573 nm indicates the possibility to use a commercially available laser diode of 450 nm as a pumping source for solid-state yellow laser. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/39901 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 樋口 幹雄
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