HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.86 >

層状半導体InSeの結晶成長とその電気的及び光学的性質

Files in This Item:
86_113-122.pdf1.01 MBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41452

Title: 層状半導体InSeの結晶成長とその電気的及び光学的性質
Other Titles: The Crystal Glowth of Layered Semiconductor InSe and its Electrical and Optical Properties
Authors: 今井, 和明1 Browse this author
長谷川, 好道2 Browse this author
阿部, 寛3 Browse this author
Authors(alt): Imai, Kazuaki1
Hasegawa, Yoshimichi2
Abe, Yutaka3
Issue Date: 3-Feb-1978
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 86
Start Page: 113
End Page: 122
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41452
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.86

Export metadata:

OAI-PMH ( junii2 , jpcoar )


 

Feedback - Hokkaido University