層状半導体InSeの結晶成長とその電気的及び光学的性質


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41452

Title:	層状半導体InSeの結晶成長とその電気的及び光学的性質
Other Titles:	The Crystal Glowth of Layered Semiconductor InSe and its Electrical and Optical Properties
Authors:	今井, 和明¹ Browse this author
	長谷川, 好道² Browse this author
	阿部, 寛³ Browse this author
Authors(alt):	Imai, Kazuaki¹
	Hasegawa, Yoshimichi²
	Abe, Yutaka³
Issue Date:	3-Feb-1978
Publisher:	北海道大学
Journal Title:	北海道大學工學部研究報告
Journal Title(alt):	Bulletin of the Faculty of Engineering, Hokkaido University
Volume:	86
Start Page:	113
End Page:	122
Type:	bulletin (article)
URI:	http://hdl.handle.net/2115/41452
Appears in Collections:	北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.86

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